Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1590738
Reference15 articles.
1. Optoelectronic Properties and Applications of Rare-Earth-Doped GaN
2. Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices
3. Growth studies of erbium‐doped GaAs deposited by metalorganic vapor phase epitaxy using novel cyclopentadienyl‐based erbium sources
4. Atomic configuration of the Er‐O luminescence center in Er‐doped GaAs with oxygen codoping
5. Erbium Doped GaAs by Mocvd
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