Photocapacitance study of deep levels due to nonstoichiometry in nitrogen‐free GaP light‐emitting diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331088
Reference11 articles.
1. Properties of Sn‐doped GaAs
2. Liquid phase epitaxy of GaP by a temperature difference method under controlled vapor pressure
3. Nearly perfect crystal growth of III–V compounds by the temperature difference method under controlled vapour pressure
4. Deep Levels Studies of N-Free and N-Doped GaP Grown by TDM-CVP
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1. High-resolution photoinduced transient spectroscopy of defect centres in semi-insulating GaP;physica status solidi (c);2011-03-01
2. Nonstoichiometric deep levels in Mg-doped GaP epitaxial layers;Materials Science in Semiconductor Processing;2003-10
3. Increase of GaP green LED efficiency with pre-annealing of the substrate;Materials Science in Semiconductor Processing;2003-10
4. Nonstoichiometric deep levels in Mg-doped GaP epitaxial layers: Effects of pre-annealing of substrates;Journal of Electronic Materials;2003-03
5. Controlled vapor-pressure heat-treatment effect on deep levels in liquid-encapsulated czochralski-grown GaP crystals;Journal of Electronic Materials;2002-06
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