First-principle-based full-dispersion Monte Carlo simulation of the anisotropic phonon transport in the wurtzite GaN thin film-Reference-Cited by-同舟云学术

First-principle-based full-dispersion Monte Carlo simulation of the anisotropic phonon transport in the wurtzite GaN thin film

Published:2016-04-14 Issue:14 Volume:119 Page:145706
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wu Ruikang¹,Hu Run¹,Luo Xiaobing¹

Affiliation:

1. State Key Laboratory of Coal Combustion and Thermal Packaging Laboratory, School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

Funder

the 973 Project of The Ministry of Science and Technology of China

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4945776

Reference34 articles.

1. Analysis of thermal properties of GaInN light-emitting diodes and laser diodes

2. The effect of multi-quantum barrier structure on light-emitting diodes performance by a non-isothermal model

3. Temperature Dependence of Quantum Efficiency of InGaN/GaN Led Structures at High Current Density

4. Use of patterned laser liftoff process and electroplating nickel layer for the fabrication of vertical-structured GaN-based light-emitting diodes

5. Single gallium nitride nanowire lasers

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