Photoemission studies ofa‐SixC1−x:H/a‐Si anda‐SixC1−x:H/ hydrogenated amorphous silicon heterojunctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94909
Reference7 articles.
1. Microscopic investigations of semiconductor interfaces
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3. Electron-spectroscopic studies of the early stages of the oxidation of Si
4. Valence band structure of hydrogenated amorphous silicon-carbon alloys studied by photoelectron spectroscopy
5. Hydrogenated amorphous silicon carbide as a window material for high efficiency a-Si solar cells
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2. X-ray photoelectron spectroscopy measurement of the Schottky barrier at the SiC(N)/Cu interface;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-09
3. Schottky Barrier Height at Dielectric Barrier/Cu Interface in Low-K/Cu Interconnects;ECS Transactions;2011-04-25
4. Quantum size effects in amorphous Si superlattice solar cells;Renewable Energy;2008-02
5. A valence-band and core-level photoemission study of a-SixC1-x thin films grown by low-temperature low-pressure chemical vapour deposition;Applied Physics A;2005-10
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