Defect mechanisms in degradation of InGaAsP long‐wavelength edge‐emitting light‐emitting diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347635
Reference15 articles.
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1. Local stresses induced by nanoscale As–Sb clusters in GaAs matrix;Applied Physics Letters;2002-01-21
2. Defects, structure, and chemistry of InP–GaAs interfaces obtained by wafer bonding;Journal of Applied Physics;2000-05
3. Reliability performance for InGaAsP/InP laser diodes mounted on different sizes of heat blocks in TO packages;Solid-State Electronics;1998-11
4. A Defect Map for Degradation of Ingaasp/Inp Long Wavelength Laser Diodes;MRS Proceedings;1996
5. Long Wavelength Laser Diode Reliability and Lattice Imperfections;MRS Bulletin;1993-12
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