Fabrication and characterization of a nanoelectromechanical switch with 15-nm-thick suspension air gap-Reference-Cited by-同舟云学术

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Fabrication and characterization of a nanoelectromechanical switch with 15-nm-thick suspension air gap

Published:2008-03-10 Issue:10 Volume:92 Page:103110
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jang Weon Wi,Lee Jeong Oen,Yoon Jun-Bo,Kim Min-Sang,Lee Ji-Myoung,Kim Sung-Min,Cho Keun-Hwi,Kim Dong-Won,Park Donggun,Lee Won-Seong

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2892659

Reference21 articles.

1. Limits on Silicon Nanoelectronics for Terascale Integration

2. Device scaling limits of Si MOSFETs and their application dependencies

3. Proceedings of the International Conference on Solid-State Sensors, Actuators and Microsystems, 2007;Jang W. W.

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