Donor‐cation vacancy complex in Si‐doped AlGaAs grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.338369
Reference3 articles.
1. Electrical and optical properties of deep levels in MOVPE grown GaAs
2. Revised calculation of point defect equilibria and non-stoichiometry in gallium arsenide
3. A new emission band in self-activated ZnS
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