Correlation of compensation in Si-doped GaAs between electrical and optical methods
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference19 articles.
1. Submicrometer GaAs MESFET with shallow channel and very high transconductance
2. Free‐to‐bound transitions in Si‐doped epitaxial Ga1−xAlxAs
3. Alloy broadening in photoluminescence spectra ofAlxGa1−xAs
4. Donor‐cation vacancy complex in Si‐doped AlGaAs grown by metalorganic chemical vapor deposition
5. Si‐ion implantation in GaAs and AlxGa1−xAs
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3. Effects of thin oxide in metal–semiconductor and metal–insulator–semiconductor epi-GaAs Schottky diodes;Solid-State Electronics;2000-06
4. Breakdown characteristics of MOVPE grown Si-doped GaAs Schottky diodes;Solid-State Electronics;1999-12
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