Effect of quantum-well confinement on acceptor state lifetime in δ -doped GaAs/AlAs multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1623950
Reference21 articles.
1. Acceptor spectra ofAlxGa1−xAs-GaAs quantum wells in external fields: Electric, magnetic, and uniaxial stress
2. Raman spectra of shallow acceptors in quantum-well structures
3. Far-infrared study of confinement effects on acceptors inGaAsAlxGa1−xAsquantum wells
4. Spectroscopic study of the effect of confinement on shallow acceptor states in GaAs/AlxGa1−xAs quantum wells
5. Population inversion in optically pumped asymmetric quantum well terahertz lasers
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1. Time-Resolved Dynamics of Shallow Acceptor Transitions in Silicon;Physical Review X;2013-03-14
2. Low-frequency noise properties of beryllium δ-doped GaAs/AlAs quantum wells near the Mott transition;Journal of Applied Physics;2013-02-28
3. Preparation and measurement of far-infrared electroluminescence emitter based on quantum confined acceptors;Acta Physica Sinica;2010
4. Intra-acceptor hole relaxation in Be δ-doped GaAs/AlAs multiple quantum wells;Chinese Physics B;2009-09
5. Far-infrared free-electron lasers and their applications;Contemporary Physics;2009-03
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