Spectroscopic study of the effect of confinement on shallow acceptor states in GaAs/AlxGa1−xAs quantum wells-Reference-Cited by-同舟云学术

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Spectroscopic study of the effect of confinement on shallow acceptor states in GaAs/AlxGa1−xAs quantum wells

Published:1989-12-15 Issue:18 Volume:40 Page:12338-12345
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Holtz P. O.,Sundaram M.,Doughty K.,Merz J. L.,Gossard A. C.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.12338/fulltext

Reference17 articles.

1. Extrinsic photoluminescence from GaAs quantum wells

2. Observation of Resonant Impurity States in Semiconductor Quantum-Well Structures

3. Binding of Shallow Donor Impurities in Quantum-Well Structures

4. Spectroscopic study of an acceptor confined in a narrow GaAs/AlxGa1−xAs quantum well

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1. Optical Properties of Bound and Localized Excitons;Graduate Texts in Physics;2019

2. Resonant electronic Raman scattering of below-gap states in molecular-beam epitaxy grown and liquid-encapsulated Czochralski grown GaAs;Journal of Applied Physics;2018-05-07

3. The exciton luminescence in Zn(Cd)Se/ZnMgSSe quantum wells;Journal of Russian Laser Research;2012-05

4. Optical Properties of Bound and Localized Excitons and of Defect States;Semiconductor Optics;2012

5. Occupation of electron subbands in optically excitedδ-acceptor-doped GaAs/AlxGa1−xAs heterostructure;Physical Review B;2011-06-24

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