Atomic layer deposition of Nb-doped ZnO for thin film transistors-Reference-Cited by-同舟云学术

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Atomic layer deposition of Nb-doped ZnO for thin film transistors

Published:2016-11-28 Issue:22 Volume:109 Page:222103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Shaw A.¹,Wrench J. S.²,Jin J. D.¹^ORCID,Whittles T. J.³^ORCID,Mitrovic I. Z.¹^ORCID,Raja M.¹,Dhanak V. R.³,Chalker P. R.²^ORCID,Hall S.¹^ORCID

Affiliation:

1. Department of Electrical and Electronic Engineering, University of Liverpool, Liverpool L69 3GJ, United Kingdom

2. School of Engineering, Centre for Materials and Structures, University of Liverpool, Liverpool L69 3GH, United Kingdom

3. Department of Physics and Stephenson Institute of Renewable Energy, University of Liverpool, Liverpool L69 3BX, United Kingdom

Funder

Engineering and Physical Sciences Research Council (EPSRC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4968194

Reference25 articles.

1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

2. Sputtered ZnO Thin-Film Transistors With Carrier Mobility Over 50 ${\rm cm}^{2}/{\rm Vs}$

3. Indium-Free Fully Transparent Electronics Deposited Entirely by Atomic Layer Deposition

4. Stable and High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition

5. Performance Improvement of Atomic Layer-Deposited ZnO/Al2O3Thin-Film Transistors by Low-Temperature Annealing in Air

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2. Nano-Scale Ga₂O₃ Interface Engineering for High-Performance of ZnO-Based Thin-Film Transistors;ACS Applied Materials & Interfaces;2022-09-06

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4. One-Volt TiO₂ Thin Film Transistors With Low-Temperature Process;IEEE Electron Device Letters;2021-04

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