Particle-induced conductivity and photoconductivity of silicon under 17 MeV proton irradiation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368725
Reference11 articles.
1. Correlation of Particle-Induced Displacement Damage in Silicon
2. Radiation-resistant photoconductivity of doped silicon under 17 MeV proton bombardment
3. Photoconductivity evolution due to carrier trapping by defects in 17 MeV‐proton irradiated silicon
4. Irradiation Temperature Dependence of Residual Defects in 17MeV-Proton Bombarded Silicon
5. Mechanism of anomalous degradation of silicon solar cells subjected to high-fluence irradiation
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4. Ion-induced changes in semiconductor properties of hydrogenated amorphous silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-11
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