Photoconductivity evolution due to carrier trapping by defects in 17 MeV‐proton irradiated silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359307
Reference15 articles.
1. Infrared Absorption and Photoconductivity in Irradiated Silicon
2. Defects in Irradiated Silicon. II. Infrared Absorption of the Si-ACenter
3. 1.8-, 3.3-, and 3.9-μ Bands in Irradiated Silicon: Correlations with the Divacancy
4. Infrared Studies of Defect Production inn-Type Si: Irradiation-Temperature Dependence
5. Photoconductivity Studies of Defects in Silicon: Divacancy-Associated Energy Levels
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