Impact of carrier heating on backscattering in inversion layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3660769
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5. Theoretical Study of Some Physical Aspects of Electronic Transport in nMOSFETs at the 10-nm Gate-Length
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1. Critical Backscattering Length in Nanotransistors;IEEE Electron Device Letters;2022-02
2. Ballisticity Saturation by Unscalable Reflections;IEEE Electron Device Letters;2020
3. Physics of Nanotransistors: Integrating of Model of Transmission and Model of the Virtual Source—Model of Transmission of the Virtual Source;Nanosistemi, Nanomateriali, Nanotehnologii;2019-06
4. Physics of Nanotransistors: Scattering of Electrons and Model of Transmission of Metal–Oxide–Semiconductor Field-Effect Transistor;Nanosistemi, Nanomateriali, Nanotehnologii;2019-06
5. Emission–Diffusion Theory of the MOSFET;IEEE Transactions on Electron Devices;2015-12
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