Author:
Pourghaderi M Ali,Ilatikhameneh Hesameddin,Pham Anh-Tuan,Park Hong-Hyun,Lim Jinyoung,Jiang Zhengping,Wang Jing,Jin Seonghoon,Kim Jongchol,Kwon Uihui,Chung Won-Young,Choi Woosung,Kim Dae Sin
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
2 articles.
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1. Critical Backscattering Length in Nanotransistors;IEEE Electron Device Letters;2022-02
2. TCAD challenges and opportunities to find a feasible device architecture for sub-3nm scaling;2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2021-09-27