The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3113523
Reference9 articles.
1. E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 2003), pp. 212–220.
2. On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates
3. Impact of weak Fermi-level pinning on the correct interpretation of III-V MOS C-V and G-V characteristics
4. Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures
5. Statistics of the Recombinations of Holes and Electrons
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