Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2981571
Reference15 articles.
1. Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz
2. Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors
3. X- and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE
4. AlGaN∕GaN HFET devices on SiC grown by ammonia-MBE with high fT and fMAX
5. Deep level defects in n-type GaN grown by molecular beam epitaxy
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