Mid-infrared InAs/GaInSb separate confinement heterostructure laser diode structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1346657
Reference29 articles.
1. Theoretical performance of InAs/ InxGa1−xSb superlattice‐based midwave infrared lasers
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3. Type‐II quantum‐well lasers for the mid‐wavelength infrared
4. Theoretical performance of mid-infrared broken-gap multilayer superlattice lasers
5. Optimization of active regions in midinfrared lasers
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1. Molecular beam epitaxy growth and characterization of type-II InAs/GaSb strained layer superlattices for long-wave infrared detection;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-05
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3. Theory of Mid-wavelength Infrared Laser Active Regions: Intrinsic Properties and Design Strategies;Mid-infrared Semiconductor Optoelectronics;2006
4. A survey of new laser and detector structures for 3-5 μm midinfrared spectral range;SPIE Proceedings;2004-09-24
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