Theoretical performance limits of 2.1–4.1 μm InAs/InGaSb, HgCdTe, and InGaAsSb lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359798
Reference28 articles.
1. Embossed-grating lead chalcogenide buried-waveguide distributed-feedback lasers
2. HgCdTe double heterostructure injection laser grown by molecular beam epitaxy
3. HgCdTe double heterostructure injection laser grown by molecular beam epitaxy
4. Carrier lifetimes and threshold currents in HgCdTe double heterostructure and multi‐quantum‐well lasers
5. Double‐heterostructure diode lasers emitting at 3 μm with a metastable GaInAsSb active layer and AlGaAsSb cladding layers
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