Growth of In0.25Ga0.75As quantum dots on GaP utilizing a GaAs interlayer-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Growth of In0.25Ga0.75As quantum dots on GaP utilizing a GaAs interlayer

Published:2012-11-26 Issue:22 Volume:101 Page:223110
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Stracke G.,Glacki A.,Nowozin T.,Bonato L.,Rodt S.,Prohl C.,Lenz A.,Eisele H.,Schliwa A.,Strittmatter A.,Pohl U. W.,Bimberg D.

Funder

Deutsche Forschungsgemeinschaft

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4768294

Reference18 articles.

1. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

2. Growth mode transition of InGaAs in OMVPE growth on GaP (001)

3. Self-forming InAs/GaP quantum dots by direct island growth

4. Self-assembled In0.5Ga0.5As quantum dots on GaP

5. Room temperature photoluminescence of high density (In,Ga)As/GaP quantum dots

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural Properties and Energy Spectrum of Novel GaSb/AlP Self-Assembled Quantum Dots;Nanomaterials;2023-02-28

2. Novel InGaSb/AlP Quantum Dots for Non-Volatile Memories;Nanomaterials;2022-10-27

3. Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix;Physical Review B;2019-11-06

4. Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots;Physical Review B;2019-09-13

5. Transparency Engineering in Quantum Dot-Based Memories;physica status solidi (a);2018-05-07

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3