Transparency Engineering in Quantum Dot-Based Memories-Reference-Cited by-同舟云学术

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Transparency Engineering in Quantum Dot-Based Memories

Published:2018-05-07 Issue:13 Volume:215 Page:1800018
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Arikan Ismail Firat¹^ORCID,Cottet Nathanaël²,Nowozin Tobias¹,Bimberg Dieter¹³

Affiliation:

1. Institut für Festkörperphysik, Technische Universität Berlin; Hardenbergstr. 36 10623 Berlin Germany

2. Ecole Normale Superieure, International Center of Fundamental Physics; Paris France

3. Changchun Institute of Optics, Fine Mechanics and Physics, CAS; Beijing China

Funder

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201800018/fullpdf

Reference34 articles.

1. Introduction to flash memory

2. 2009

3. 106years extrapolated hole storage time in GaSb∕AlAs quantum dots

4. The QD-Flash: a quantum dot-based memory device

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural Properties and Energy Spectrum of Novel GaSb/AlP Self-Assembled Quantum Dots;Nanomaterials;2023-02-28

2. Novel InGaSb/AlP Quantum Dots for Non-Volatile Memories;Nanomaterials;2022-10-27

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