Bond‐length disorder and metastability in hydrogenated amorphous silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.115878
Reference23 articles.
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Structure and electronic states in a-Si:H thin films;Journal of Materials Science;2012-03-15
2. Study on the microstructural and overall disorder in hydrogenated amorphous silicon carbon films;Journal of Applied Physics;2008-12-15
3. Quantitative hydrogen measurements in PECVD and HWCVD a-Si:H using FTIR spectroscopy;Journal of Materials Science;2006-06-06
4. Light induced defects in sputtered amorphous silicon thin films;Materials Chemistry and Physics;2002-04
5. Correlation between the opto-electronic and structural parameters of amorphous semiconductors;Thin Solid Films;2002-03
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