Mechanism analysis of irradiation location dependent leakage current for zinc oxide thin-film transistors-Reference-Cited by-同舟云学术

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Mechanism analysis of irradiation location dependent leakage current for zinc oxide thin-film transistors

Published:2021-07-01 Issue:7 Volume:11 Page:075108
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Qin Ting¹,Qu Zewen¹,Deng Lianwen¹^ORCID,Huang Shengxiang¹^ORCID,Liao Congwei¹,Luo Heng¹^ORCID,Li Chen¹,Peng Yuhui¹,Tang Min¹,Gao Xiaohui¹

Affiliation:

1. School of Physics and Electronics, Central South University, Changsha 410083, China

Funder

The Nation Key Research and Development Program of China

The National Natural Science Foundation of China

Fundamental Research Funds for Central Universities of the Central South University

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0041411

Reference26 articles.

1. Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) for AM-LCDs

2. Piezoelectricity and charge trapping in ZnO and Co-doped ZnO thin films

3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

4. 37‐2: Development of high mobility top gate IGZO‐TFT for OLED display.

5. A 128×96 Pixel Stack-Type Color Image Sensor: Stack of Individual Blue-, Green-, and Red-Sensitive Organic Photoconductive Films Integrated with a ZnO Thin Film Transistor Readout Circuit

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