Accelerated aging test of InGaAsP/InP double‐heterostructure laser diodes with single transverse mode
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92120
Reference5 articles.
1. 1500‐h continuous cw operation of double‐heterostructure GaInAsP/InP lasers
2. 10 000-h continuous CW operation of In1-xGaxAsyP1-yInP DH lasers at room temperature
3. Accelerated Aging Characteristics of InGaAsP/InP Buried Heterostructure Lasers Emitting at 1.3 µm
4. Aging characteristics of Ga1−xAlxAs double‐heterostructure lasers bonded with gold eutectic alloy solder
5. Aging characteristics of Ga1−xAlxAs double‐heterostructure lasers bonded with gold eutectic alloy solder
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1. Historical overview and future of optoelectronics reliability for optical fiber communication systems;Microelectronics Reliability;2000-01
2. Some observations from interrupted lifetest of GaInAsP/InP inverted-rib laser diodes;Journal of Electronic Testing;1995-02
3. Degradation recovery in 1.3 μm GaInAsP-InP inverted-rib laser diodes;Microelectronic Engineering;1994-12
4. Observation of degradation relaxation in 1.3 μm GaInAsP laser diodes;Microelectronics Reliability;1994-04
5. Semiconductor Lasers—Materials and Devices;Fundamentals of Laser Optics;1994
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