Accelerated Aging Characteristics of InGaAsP/InP Buried Heterostructure Lasers Emitting at 1.3 µm-Reference-Cited by-同舟云学术

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Accelerated Aging Characteristics of InGaAsP/InP Buried Heterostructure Lasers Emitting at 1.3 µm

Published:1980-07 Issue:7 Volume:19 Page:L429-L432
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mizuishi Ken-ichi,Hirao Motohisa,Tsuji Shinji,Sato Hitoshi,Nakamura Michiharu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Planar-buried-heterostructure laser diodes with oxidized AlAs insulating current blocking;IEEE Journal of Selected Topics in Quantum Electronics;1999

4. Semiconductor Lasers—Materials and Devices;Fundamentals of Laser Optics;1994

5. Liquid phase epitaxy;Applied Physics A Solids and Surfaces;1991-06

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