Masking effect of copper during anisotropic etching of silicon in buffered hydrofluoric acid solutions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369310
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1. Leakage and Breakdown in Thin Oxide Capacitors—Correlation with Decorated Stacking Faults
2. Dependence of lifetime on surface concentration of copper and iron in silicon wafers
3. The Si–SiO2 interface: Correlation of atomic structure and electrical properties
4. Dependence of thin-oxide films quality on surface microroughness
5. The Evolution of Silicon Wafer Cleaning Technology
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3. Chemical States of Copper Contaminants on SiO2 Surfaces and Their Removal by ppm-order HCN Aqueous Solutions;Journal of The Electrochemical Society;2011
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