Vertical GaN trench MOSFETs with step-graded channel doping-Reference-Cited by-同舟云学术

Vertical GaN trench MOSFETs with step-graded channel doping

Published:2022-06-13 Issue:24 Volume:120 Page:242104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhu Renqiang¹^ORCID,Jiang Huaxing¹^ORCID,Tang Chak Wah¹,Lau Kei May¹²^ORCID

Affiliation:

1. Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China

2. Microelectronic Thrust, Hong Kong University of Science and Technology (GZ), Guangzhou, China

Abstract

Vertical GaN trench MOSFETs have shown enormous potential for efficient power switching applications. Low ON-resistance ( RON) to minimize power loss, high output current ( ION) to maximize driving capability, and large threshold voltage ( Vth) to avoid false turn-on are highly desirable. This work reports vertical GaN trench MOSFETs with step-graded channel doping. Conventional devices with uniform channel doping were involved for comparison. The experimental results show that step-graded channel doping can achieve an improved trade-off between ION, RON, and Vth than uniform channel doping.

Funder

Research Grants Council, University Grants Committee

Innovation and Technology Fund

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0088251

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