Polycrystalline silicon recrystallized with excimer laser irradiation and impurity doping using ion doping method
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352974
Reference10 articles.
1. Poly-Si - A Most Important Material
2. Stochastic model for grain size versus dose in implanted and annealed polycrystalline silicon films on SiO2
3. XeCl Excimer Laser Annealing Used to Fabricate Poly-Si Tfts
4. Fast-Pulse Excimer-Laser-Induced Processes in a-Si:H
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