Correlation between the transport mechanisms in conductive filaments inside Ta2O5-based resistive switching devices and in substoichiometric TaOx thin films-Reference-Cited by-同舟云学术

Correlation between the transport mechanisms in conductive filaments inside Ta2O5-based resistive switching devices and in substoichiometric TaOx thin films

Published:2018-05-21 Issue:21 Volume:112 Page:213504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Rosário Carlos M. M.¹²^ORCID,Thöner Bo³,Schönhals Alexander²^ORCID,Menzel Stephan⁴,Wuttig Matthias³⁴^ORCID,Waser Rainer²⁴^ORCID,Sobolev Nikolai A.¹⁵^ORCID,Wouters Dirk J.²^ORCID

Affiliation:

1. Physics Department and I3N, University of Aveiro, Aveiro 3810-193, Portugal

2. Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Aachen 52074, Germany

3. I. Physikalisches Institut IA, RWTH Aachen University, Aachen 52074, Germany

4. Peter Grünberg Institute and JARA-FIT, Forschungszentrum Jülich, Jülich 52428, Germany

5. National University of Science and Technology “MISiS,” Moscow 119049, Russia

Funder

CRUP and DAAD

Deutsche Forschungsgemeinschaft

Publisher

AIP Publishing

Subject