C54‐TiSi2formed by direct high current Ti‐ion implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109417
Reference9 articles.
1. Induced interface interactions in Ti/Si systems by ion implantation
2. Observations on the hexagonal form of MoSi2and WSi2films produced by ion implantation and on related snowplow effects
3. Development of the self-aligned titanium silicide process for VLSI applications
4. High current ion source
5. Metastable phase formation in titanium‐silicon thin films
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