Triple Shockley type stacking faults in 4H-SiC epilayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3095508
Reference18 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
2. Degradation of hexagonal silicon-carbide-based bipolar devices
3. Stacking fault energy of 6H-SiC and 4H-SiC single crystals
4. Defects in plastically deformed 6H SiC single crystals studied by transmission electron microscopy
5. Stacking fault energy and ionicity of cubic III–V compounds
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