Diameter-dependent boron diffusion in silicon nanowire-based transistors-Reference-Cited by-同舟云学术

Diameter-dependent boron diffusion in silicon nanowire-based transistors

Published:2013-02-04 Issue:5 Volume:102 Page:052108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Schulze Andreas,Florakis Antonios,Hantschel Thomas,Eyben Pierre,Verhulst Anne S.,Rooyackers Rita,Vandooren Anne,Vandervorst W.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4790438

Reference28 articles.

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2. Low-Voltage Tunnel Transistors for Beyond CMOS Logic

3. Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates

4. Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires

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