Mapping Conductance and Carrier Distributions in Confined Three-Dimensional Transistor Structures-Reference-Cited by-同舟云学术

Mapping Conductance and Carrier Distributions in Confined Three-Dimensional Transistor Structures

Published:2019 Issue: Volume: Page:71-106
ISSN:1434-4904
Container-title:Electrical Atomic Force Microscopy for Nanoelectronics
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Author:

Schulze Andreas,Eyben Pierre,Mody Jay,Paredis Kristof,Wouters Lennaert,Celano Umberto,Vandervorst Wilfried

Publisher

Springer International Publishing

Link

http://link.springer.com/content/pdf/10.1007/978-3-030-15612-1_3

Reference65 articles.

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3. P. De Wolf, Two-dimensional carrier profiling of semiconductor structures with nanometer resolution. Ph.D. thesis (KU Leuven, Leuven, Belgium 1998)

4. P. De Wolf, J. Snauwaert, T. Clarysse, W. Vandervorst, L. Hellemans, Characterization of a point-contact on silicon using force microscopy-supported resistance measurements. Appl. Phys. Lett. 66(12), 1530 (1995)

5. T. Clarysse, D. Vanhaeren, I. Hoflijk, W. Vandervorst, Characterization of electrically active dopant profiles with the spreading resistance probe. Mater. Sci. Eng.: R: Rep. 47(5–6), 123–206 (2004)

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