Mg in GaN: Incorporation of a volatile species at high temperatures during molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119793
Reference11 articles.
1. Characteristics of light‐emitting diodes based on GaNp‐njunctions grown by plasma‐assisted molecular beam epitaxy
2. Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substrates
3. Properties of GaN films grown under Ga and N rich conditions with plasma enhanced molecular beam epitaxy
4. Surface lifetimes of Ga and growth behavior on GaN (0001) surfaces during molecular beam epitaxy
5. Volatile metal oxide incorporation in layers of GaAs and Ga1−xAlxAs grown by molecular beam epitaxy
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