Selective regrowth of Al0.30Ga0.70Np–i–nphotodiodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1322374
Reference11 articles.
1. Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells
2. Biaxial strain in AlxGa1−xN/GaN layers deposited on 6H-SiC
3. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
4. heterostructure grown by metalorganic vapor phase epitaxy
5. Improved device performance using a semi-transparent p-contact AlGaN/GaN heterojunction positive-intrinsic-negative photodiode
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