Surface treatment of (11̄02) sapphire and (100) silicon for molecular beam epitaxial growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94889
Reference6 articles.
1. Etching of SiO2Films by Si in Ultra-High Vacuum
2. Reduction of oxides on silicon by heating in a gallium molecular beam at 800 °Ca)
3. Silicon Cleaning with Hydrogen Peroxide Solutions: A High Energy Electron Diffraction and Auger Electron Spectroscopy Study
4. Growth of dislocation‐free silicon films by molecular beam epitaxy (MBE)
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