Abstract
The work is devoted to the study of the stabilizing effect of yttrium additions during the deposition of thin aluminum films, which are used for the manufacture of elements of micro- and nanoelectronic devices. The surfaces of Al films doped with aluminum oxide were investigated using a scanning electron microscope before and after annealing for 300420 s at a temperature of 500 C. It is shown that fine alumina particles are uniformly distributed on the surface of the films during thermal evaporation of a wire made of an Al Al2O3 alloy. By the method of quantitative metallography, the content of the AlxOy phase in the Al films was determined: when spraying wire from the Al Al2O3 alloy, its content was 1012% of the mass fraction; when spraying wire made of Al Al2O3 alloy and Al wire in a ratio of 50:50 1% mass fraction.
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