Dopant-driven enhancements in the optoelectronic properties of laser ablated ZnO: Ga thin films
Author:
Affiliation:
1. Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, People's Republic of China
2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Funder
National Natural Science Foundation of China
China Scholarship Council
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5003686
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4. Gold-modified indium tin oxide as a transparent window in optoelectronic diagnostics of electrochemically active biofilms
5. Effect of La doping on the structural, optical and electrical properties of spray pyrolytically deposited CdO thin films
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