Robust Stability of Optical and Electronic Properties of Gallium‐Doped Zinc Oxide Thin Films to Gamma Ray Irradiation-Reference-Cited by-同舟云学术

Robust Stability of Optical and Electronic Properties of Gallium‐Doped Zinc Oxide Thin Films to Gamma Ray Irradiation

Published:2021-12-10 Issue: Volume: Page:2100469
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Physica Status Solidi (b)

Author:

Barone Claudia¹,Gupta Jeetendra²,Martin Rodica M.¹,Sydoryk Ihor²,Craciun Valentin³⁴,Nomoto Junichi⁵,Makino Hisao⁵,Yamamoto Tetsuya⁶^ORCID,Martin Catalin²^ORCID

Affiliation:

1. Department of Physics and Astronomy Montclair State University Montclair NJ 07043 USA

2. Ramapo College of New Jersey Mahwah NJ 07430 USA

3. National Institute for Laser, Plasma, and Radiation Physics Strada Atomiştilor 409 Măgurele 077125 Romania

4. Extreme Light Infrastructure for Nuclear Physics, ELI-NP No. 30, Reactorului Street Magurele 077125 Ilfov Romania

5. Advanced Coating Technology Research Center National Institute of Advanced Industrial Science and Technology (AIST) Ibaraki 305-8565 Japan

6. Research Institute Kochi University of Technology Kochi 782-8502 Japan

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202100469

Reference21 articles.

1. Transparent Conducting Oxide Films for Various Applications: A Review

2. Transparent Conducting Oxides—An Up-To-Date Overview

3. n-Type doped transparent conducting binary oxides: an overview

4. Characteristics of Ga-doped ZnO thin-film ultraviolet photodetectors fabricated on patterned Si substrate

5. Vacuum annealed Ga:ZnO (GZO) thin films for solar cell integrated transparent antenna application

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