Depth distribution and thermal stability of implanted Hg ions in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354715
Reference13 articles.
1. Megaelectronvolt implantations in silicon very-large-scale integration
2. Applications of MeV ion beams to material processing
3. Non-regular depth profiles of light ions implanted into organic polymer films
4. Dose and energy dependence of implanted ion profiles (9:≦ 1 ≦ 83) in the AZ111 photoresist
5. Depth distributions of megaelectronvolt 14N implanted into various solids at elevated fluences
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Range profiles of fluorine implanted YBCO films;Journal of Physics D: Applied Physics;1997-03-21
2. Diffusion, evaporation and recrystallization in Hg-implanted amorphous Si;Solid State Communications;1995-01
3. 2 Diffusion in Si - References;Diffusion in Semiconductors
4. 2 Diffusion in Si - Figs. 1-100;Diffusion in Semiconductors
5. 2 Diffusion in Si;Diffusion in Semiconductors
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