Comparison between direct current and sinusoidal current stressing of gate oxides and oxide/silicon interfaces in metal–oxide–silicon field-effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363892
Reference15 articles.
1. Gate oxide damage from polysilicon etching
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4. Thin oxide charging current during plasma etching of aluminum
5. Plasma‐charging damage to gate SiO2and SiO2/Si interfaces in submicronn‐channel transistors: Latent defects and passivation/depassivation of defects by hydrogen
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. MOS RF Reliability Subject to Dynamic Voltage Stress—Modeling and Analysis;IEEE Transactions on Electron Devices;2005-08
2. Changes in material properties of low-k interlayer dielectric polymers induced by exposure to plasmas;Microelectronic Engineering;2003-05
3. Damage to sub-half-micron metal-oxide-silicon field-effect transistors from plasma processing of low- k polymer interlayer dielectrics;Semiconductor Science and Technology;2000-03-08
4. Damage to n-MOSFETs from electrical stress Relationship to processing damage and impact on device reliability;Microelectronics Reliability;1998-04
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