Author:
Kwon O.,Boeckl J.,Lee M. L.,Pitera A. J.,Fitzgerald E. A.,Ringel S. A.
Subject
General Physics and Astronomy
Reference20 articles.
1. Gallium arsenide and other compound semiconductors on silicon
2. Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
3. Toward device-quality GaAs growth by molecular beam epitaxy on offcut Ge/Si[sub 1−x]Ge[sub x]/Si substrates
4. S. A. Ringel, C. L. Andre, M. K. Hudait, D. M. Wilt, E. B. Clark, A. J. Pitera, M. L. Lee, E. A. Fitzgerald, M. Carroll, M. Erdtmann, J. A. Carlin, and B. M. Keyes, Proceedings of the Third World Conference on Photovoltaic Energy Conversion, Osaka, 2003 (IEEE, New York, 2003), Vol. 1, pp. 612–615.
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