Photoluminescence fatigue in three-dimensional silicon/silicon-germanium nanostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3698303
Reference17 articles.
1. Porous Silicon Physics and Device Applications: A Status Report
2. Recombination in amorphous semiconductors
3. Excitation spectra of photoluminescence fatigue and creation of paramagnetic centers in amorphous GexSe1−x
4. Temperature dependence of the density of optically-induced localized paramagnetic states in glassy As2Se3
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1. Assessing Carrier Recombination Processes in Type‐II SiGe/Si(001) Quantum Dots;Annalen der Physik;2019-01-11
2. Si/SiGe Heterointerfaces in One-, Two-, and Three-Dimensional Nanostructures: Their Impact on SiGe Light Emission;Frontiers in Materials;2016-03-07
3. (Invited) Fast and Slow Light-Emitting Silicon-Germanium Nanostructures;ECS Transactions;2013-05-03
4. Fast Luminescence in Silicon-Germanium Nanostructures;ECS Transactions;2013-04-01
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