Multiferroic tunnel junction of Ni50.3Mn36.9Sb12.8/BiFeO3/Ni50.3Mn36.9Sb12.8 for magneto-electric random access memory devices-Reference-Cited by-同舟云学术

Multiferroic tunnel junction of Ni50.3Mn36.9Sb12.8/BiFeO3/Ni50.3Mn36.9Sb12.8 for magneto-electric random access memory devices

Published:2016-02-29 Issue:9 Volume:108 Page:092404
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Barman Rahul¹,Kaur Davinder¹^ORCID

Affiliation:

1. Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology, Indian Institute of Technology Roorkee, Roorkee 247667, Uttarakhand, India

Funder

Defence Research and Development Organisation (DRDO)

Ministry of Human Resource Development (MHRD)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4943022

Reference35 articles.

1. Emerging Nanoscale Memory and Logic Devices: A Critical Assessment

2. Multiferroics: progress and prospects in thin films

3. Tunneling Across a Ferroelectric

4. Recent Progress in Multiferroic Magnetoelectric Composites: from Bulk to Thin Films

5. Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions

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