Multiferroic tunnel junction of Ni50.3Mn36.9Sb12.8/BiFeO3/Ni50.3Mn36.9Sb12.8 for magneto-electric random access memory devices
Author:
Affiliation:
1. Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology, Indian Institute of Technology Roorkee, Roorkee 247667, Uttarakhand, India
Funder
Defence Research and Development Organisation (DRDO)
Ministry of Human Resource Development (MHRD)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4943022
Reference35 articles.
1. Emerging Nanoscale Memory and Logic Devices: A Critical Assessment
2. Multiferroics: progress and prospects in thin films
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4. Recent Progress in Multiferroic Magnetoelectric Composites: from Bulk to Thin Films
5. Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions
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