Electric field control of magnetization in polycrystalline ZnO film

Author:

Guchhait Suman1ORCID,Aireddy H.2ORCID,Kander Niladri Sekhar1ORCID,Das A. K.1ORCID

Affiliation:

1. Department of Physics, IIT Kharagpur 1 , Kharagpur, West Bengal 721302, India

2. Department of Electronics and Communication Engineering, Alliance College of Engineering and Design 2 , Bengaluru, Karnataka 562106, India

Abstract

A polycrystalline ZnO film is grown on a silicon substrate by the pulsed laser deposition method, and the electric field-induced magnetization in ZnO using an optical cantilever beam magnetometer setup is studied. The magnetization vs bipolar dc electric field measurements reveal the occurrence of magnetization switching in the ZnO film. The magnetization switching in the presence of an electric field is ascribed to the converse magnetoelectric (ME) coupling that takes place between the electrical and the magnetic order parameters existing in the ZnO film. We have found the strain-driven magnetization change as evidenced by the butterfly shape of the magnetization vs the electric field curve. A saturation magnetization of 13.31 MA/m is obtained. Moreover, a significant value of the ME coupling coefficient (α) (1.61 × 10−7 s/m) has also been reported in this article. The emergence of electric field-induced magnetization in a single polycrystalline ZnO film is regarded to be a very promising aspect in designing high-density energy-efficient spintronic and different multifunctional devices.

Funder

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

AIP Publishing

Subject

General Physics and Astronomy

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3