Tunnel magnetoresistance effect in double magnetic tunnel junctions using half-metallic Heusler alloy electrodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3072023
Reference8 articles.
1. Search for Half-Metallic Compounds in Co2MnZ (Z=IIIb, IVb, Vb Element)
2. Slater-Pauling behavior and origin of the half-metallicity of the full-Heusler alloys
3. Co2MnX(X=Si,Ge, Sn) Heusler compounds: Anab initiostudy of their structural, electronic, and magnetic properties at zero and elevated pressure
4. Giant tunneling magnetoresistance in Co2MnSi∕Al–O∕Co2MnSi magnetic tunnel junctions
5. Direct observation of half-metallic energy gap in Co2MnSi by tunneling conductance spectroscopy
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1. Ab initio electronic structure of NiCoCrGa half-metallic quaternary Heusler compound;Solid State Sciences;2012-09
2. A first principles study on Mn2NiGa Heusler alloy;Acta Physica Sinica;2012
3. Spin transistor using magnetic tunnel junctions with half-metallic Co2MnSi Heusler alloy electrodes;Applied Physics Letters;2011-09-26
4. A first-principles study of electronic structure, magnetism, response to pressure and tetragonal distortions of Ni2MnSi Heusler alloy;Acta Physica Sinica;2010
5. Spin transistor based on double tunnel junctions using half-metallic Co2MnSi electrodes;Journal of Physics: Conference Series;2010-01-01
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