Spin transistor based on double tunnel junctions using half-metallic Co2MnSi electrodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/200/i=5/a=052019/pdf
Reference5 articles.
1. Giant tunneling magnetoresistance in Co2MnSi∕Al–O∕Co2MnSi magnetic tunnel junctions
2. Direct observation of half-metallic energy gap in Co2MnSi by tunneling conductance spectroscopy
3. Tunnel magnetoresistance effect in double magnetic tunnel junctions using half-metallic Heusler alloy electrodes
4. Fabrication and Characterization of Micro-fabricated Double Magnetic Tunnel Junctions Using Co2MnSi Electrodes
5. Fabrication of ferromagnetic single-electron tunneling devices by utilizing metallic nanowire as hard mask stencil
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1. Tunnel magnetoresistance in epitaxial (100)-oriented FeCo/LiF/FeCo magnetic tunnel junctions;Applied Physics Letters;2016-11-07
2. Theoretical investigations of an influence of Ti on electronic structure and magnetic properties of half-metallic Fe2Mn1−xTixSi0.5Al0.5 alloys;Journal of Magnetism and Magnetic Materials;2015-02
3. Ab-initio study of electronic structure and magnetic properties of half-metallic Fe2Mn1−V Si0.5Al0.5 alloys;Journal of Solid State Chemistry;2014-11
4. Electrostatic Spin Crossover and Concomitant Electrically Operated Spin Switch Action in a Ti-Based Endohedral Metallofullerene Polymer;Physical Review Letters;2012-12-18
5. Electric and Magnetic Properties of bcc Fe Based Multicomponent Alloys;Journal of the Physical Society of Japan;2012-06-15
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