Investigation of the heteroepitaxial interfaces in the GaInP/GaAs superlattices by high‐resolution x‐ray diffractions and dynamical simulations
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354038
Reference16 articles.
1. Evidence for intrinsic interfacial strain in lattice-matchedInxGa1−xAs/InP heterostructures
2. Factors influencing the presence and detection of compositional grading at semiconductor hetero-epitaxial interfaces
3. Characterization of (In,Ga)As/GaAs strained-layer multiple quantum wells with high-resolution X-ray diffraction and computer simulations
4. Assessment of mismatched epitaxial layers by X-ray rocking curve measurements and simulations
5. High‐quality GaAs/Ga0.49In0.51P superlattices grown on GaAs and silicon substrates by low‐pressure metalorganic chemical vapor deposition
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