Variable width and electron density quantum wires in GaAs/AlGaAs with ion‐implanted gates and a surface Schottky gate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107481
Reference9 articles.
1. Fabrication and transport characteristics of semiconductor wire and ring structures
2. Narrow conducting channels defined by helium ion beam damage
3. Transport characteristics of AlGaAs/GaAs wires fabricated by focused Ga‐ion‐beam implantation
4. One-Dimensional Conduction in the 2D Electron Gas of a GaAs-AlGaAs Heterojunction
5. In‐plane‐gated quantum wire transistor fabricated with directly written focused ion beams
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1. Nanofabrication for Electronics;Advances in Imaging and Electron Physics;1997
2. Electron transport in multiprobe quantum wires anomalous magnetoresistance effects;Journal of Applied Physics;1995-07
3. Variable‐area resonant tunneling diodes using implanted in‐plane gates;Journal of Applied Physics;1994-07-15
4. Enhancement of the electronic effective mass in quantum wires;Physical Review B;1994-07-15
5. Lateral resonant tunneling through constrictions in a δ ‐doped GaAs layer;Applied Physics Letters;1994-01-03
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