Use of necked-down areas to control nucleation site and direction of solidification of polycrystalline silicon using excimer laser crystallization
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1288502
Reference26 articles.
1. Influence of the Grain Boundaries and Intragrain Defects on the Performance of Poly‐Si Thin Film Transistors
2. Silicide precipitation and silicon crystallization in nickel implanted amorphous silicon thin films
3. Silicide formation and silicide‐mediated crystallization of nickel‐implanted amorphous silicon thin films
4. Low‐temperature dopant activation and its application to polycrystalline silicon thin film transistors
5. XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's
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